inchange semiconductor product specification silicon npn power transistors 2SD1773 description ? ? with to-220fa package ? darlington ? complement to type 2sb1193 ? high speed switching applications ? for medium speed switching applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 120 v v ceo collector-emitter voltage open base 120 v v ebo emitter-base voltage open col lector 7 v i c collector current (dc) 8 a i cm collector current-peak 12 a t a =25 ?? 2 p c collector power dissipation t c =25 ?? 50 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outline (to-220fa) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2SD1773 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =2a , l=10mh 120 v v (br)ebo emitter-base breakdown voltage i e =50ma ;i c =0 7 v v cesat-1 collector-emitter saturation voltage i c =4a ;i b =8ma 1.5 v v cesat-2 collector-emitter saturation voltage i c =8a ;i b =80ma 3.0 v v besat-1 base-emitter saturation voltage i c =4a ;i b =8ma 2.0 v v besat-2 base-emitter saturation voltage i c =8a ;i b =80ma 3.5 v i cbo collector cut-off current v cb =120v ;i e =0 100 | a i ceo collector cut-off current v ce =100v ;i b =0 10 | a h fe dc current gain i c =4a ; v ce =3v 1000 20000 f t transition frequency i c =0.5a ; v ce =10v,f=1mhz 20 mhz switching times t on turn-on time 0.7 | s t s storage time 6.0 | s t f fall time i c =4a ;i b1 =8ma i b2 =-8ma; v cc =50v 2.0 | s
inchange semiconductor product specification 3 silicon npn power transistors 2SD1773 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.15 mm)
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